src/mainboard/bap/ode_e20XX/spd/BAP_Q7_1066.spd.hex

# SPDX-License-Identifier: GPL-2.0-only

# Memory chip: Hynix H5TQ4G63MFR-PBC with ECC
# BAP ODE E20XX has 2GB RAM soldered down on the Q7
# Memory setting for DDR-1066

#	0 Number of SPD Bytes used / Total SPD Size / CRC Coverage
#		bits[3:0]: 1 = 128 SPD Bytes Used
#		bits[6:4]: 1 = 256 SPD Bytes Total
#		bit7     : 0 = CRC covers bytes 0 ~ 125
11

#	1 SPD Revision -
#		0x12 = Revision 1.2
12

#	2 Key Byte / DRAM Device Type
#		bits[7:0]: 0x0b = DDR3 SDRAM
0B

#	3 Key Byte / Module Type
#		bits[3:0]: 3 = SO-DIMM
#		bits[7:4]:     reserved
03

#	4 SDRAM CHIP Density and Banks
#		bits[3:0]: 4 = 4 Gigabits Total SDRAM capacity per chip
#		bits[6:4]: 0 = 3 (8 banks)
#		bit7     :     reserved
04

#	5 SDRAM Addressing
#		bits[2:0]: 1 = 10 Column Address Bits
#		bits[5:3]: 3 = 15 Row Address Bits
#		bits[7:6]:     reserved
19

#	6 Module Nominal Voltage, VDD
#		bit0     : 0 = 1.5 V operable
#		bit1     : 0 = NOT 1.35 V operable
#		bit2     : 0 = NOT 1.25 V operable
#		bits[7:3]:     reserved
00

#	7 Module Organization
#		bits[2:0]: 2 = 16 bits
#		bits[5:3]: 0 = 1 Rank
#		bits[7:6]:     reserved
02

#	8 Module Memory Bus Width
#		bits[2:0]: 3 = Primary bus width is 64 bits
#		bits[4:3]: 1 = 1 bit (bus width extension ECC)
#		bits[7:5]:     reserved
0B

#	9 Fine Timebase (FTB) Dividend / Divisor
#		bits[3:0]: 0x01 divisor
#		bits[7:4]: 0x01 dividend
#		1/1 = 1ps
11

#	10 Medium Timebase (MTB) Dividend
#	11 Medium Timebase (MTB) Divisor
#		1 / 8 = .125 ns - used for DDR3
01 08

#	12 SDRAM Minimum Cycle Time (tCKmin)
#		0x0F  = tCKmin of 1.875 ns = DDR3-1066 (533 MHz clock)
0F

#	13 Reserved
00

#	14 CAS Latencies Supported, Least Significant Byte
#	15 CAS Latencies Supported, Most Significant Byte
#		Cas Latencies of 8 - 5 are supported
1E 00

#	16 Minimum CAS Latency Time (tAAmin)
#		0x69 = 13.125ns - DDR3-1066F
69

#	17 Minimum Write Recovery Time (tWRmin)
#		0x78 = tWR of 15ns - All DDR3 speed grades
78

#	18 Minimum RAS# to CAS# Delay Time (tRCDmin)
#		0x69 = 13.125ns -  DDR3-1066F
69

#	19 Minimum Row Active to Row Active Delay Time (tRRDmin)
#		0x3C = 7.5ns
3C

#	20 Minimum Row Precharge Delay Time (tRPmin)
#		0x69 = 13.125ns -  DDR3-1066F
69

#	21 Upper Nibbles for tRAS and tRC
#		bits[3:0]: tRAS most significant nibble = 1 (see byte 22)
#		bits[7:4]: tRC most significant nibble = 1 (see byte 23)
11

#	22 Minimum Active to Precharge Delay Time (tRASmin), LSB
#		0x12C = 37.5ns - DDR3-1066 (see byte 21)
2C

#	23 Minimum Active to Active/Refresh Delay Time (tRCmin), LSB
#		0x195 = 50.625ns - DDR3-1066F (see byte 21)
95

#	24 Minimum Refresh Recovery Delay Time (tRFCmin), LSB
#	25 Minimum Refresh Recovery Delay Time (tRFCmin), MSB
#		0x500 = 160ns - for 2 Gigabit chips
80 07

#	26 Minimum Internal Write to Read Command Delay Time (tWTRmin)
#		0x3c = 7.5 ns - All DDR3 SDRAM speed bins
3C

#	27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin)
#		0x3c =  7.5ns -  All DDR3 SDRAM speed bins
3C

#	28 Upper Nibble for tFAWmin
#	29 Minimum Four Activate Window Delay Time (tFAWmin)
#		0x0190 = 50ns -  DDR3-1066, 2 KB page size
01 90

#	30 SDRAM Optional Feature
#		bit0     : 1= RZQ/6 supported
#		bit1     : 1 = RZQ/7 supported
#		bits[6:2]:     reserved
#		bit7     : 0 = DLL Off mode supported
03

#	31 SDRAM Thermal and Refresh Options
#		bit0     : 0 = Temp up to 95c supported
#		bit1     : 0 = 85-95c uses 2x refresh rate
#		bit2     : 1 = Auto Self Refresh supported
#		bit3     : 0 = no on die thermal sensor
#		bits[6:4]:     reserved
#		bit7     : 0 = partial self refresh supported
04

#	32 Module Thermal Sensor
#		0 = Thermal sensor not incorporated onto this assembly
00

#	33 SDRAM Device Type
#		bits[1:0]: 0 = Signal Loading not specified
#		bits[3:2]:     reserved
#		bits[6:4]: 0 = Die count not specified
#		bit7     : 0 = Standard Monolithic DRAM Device
00

#	34 Fine Offset for SDRAM Minimum Cycle Time (tCKmin)
#	35 Fine Offset for Minimum CAS Latency Time (tAAmin)
#	36 Fine Offset for Minimum RAS# to CAS# Delay Time (tRCDmin)
#	37 Fine Offset for Minimum Row Precharge Delay Time (tRPmin)
#	38 Fine Offset for Minimum Active to Active/Refresh Delay (tRCmin)
00 00 00 00 00

#	39 - 59 (reserved)
00 00 00 00 00 00 00 00
00 00 00 00 00 00 00 00
00 00 00 00 00

#	60 Raw Card Extension, Module Nominal Height
#		bits[4:0]: 0 = <= 15mm tall
#		bits[7:5]: 0 = raw card revision 0-3
00

#	61 Module Maximum Thickness
#		bits[3:0]: 0 = thickness front <= 1mm
#		bits[7:4]: 0 = thinkness back <= 1mm
00

#	62 Reference Raw Card Used
#		bits[4:0]: 0 = Reference Raw card A used
#		bits[6:5]: 0 = revision 0
#		bit7     : 0 = Reference raw cards A through AL
00

#	63 Address Mapping from Edge Connector to DRAM
#		bit0     : 0 = standard mapping (not mirrored)
#		bits[7:1]:     reserved
00

#	64 - 116 (reserved)
00 00 00 00 00 00 00 00
00 00 00 00 00 00 00 00
00 00 00 00 00 00 00 00
00 00 00 00 00 00 00 00
00 00 00 00 00 00 00 00
00 00 00 00 00 00 00 00
00 00 00 00 00

#	117 - 118 Module ID: Module Manufacturers JEDEC ID Code
#		0x80AD = Hynix
80 AD

#	119 Module ID: Module Manufacturing Location - oem specified
#	120 Module ID: Module Manufacture Year in BCD
#		0x00 = 2000
00 00

#	121 Module ID: Module Manufacture week
#		0x00 = 0th week
00

#	122 - 125: Module Serial Number
00 00 00 00

#	126 - 127: Cyclical Redundancy Code
E9 40