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#ifndef __CB_BDK_DRAM_TEST_H__
#define __CB_BDK_DRAM_TEST_H__
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/**
* @file
*
* Functions for configuring DRAM.
*
* <hr>$Revision: 49448 $<hr>
*
* @defgroup dram DRAM related functions
* @{
*/
/**
* Flags to pass to DRAM tests to control behavior
*/
typedef enum
{
/* Which nodes to check. If none are specified, default to all */
BDK_DRAM_TEST_NODE0 = 1 << BDK_NODE_0,
BDK_DRAM_TEST_NODE1 = 1 << BDK_NODE_1,
BDK_DRAM_TEST_NODE2 = 1 << BDK_NODE_2,
BDK_DRAM_TEST_NODE3 = 1 << BDK_NODE_3,
BDK_DRAM_TEST_NO_STOP_ERROR = 1 << 8, /**< Don't stop running tests on errors, continue counting all errors */
BDK_DRAM_TEST_NO_PROGRESS = 1 << 9, /**< Don't report progress percentage during run, for batch runs */
BDK_DRAM_TEST_NO_STATS = 1 << 10, /**< Don't report usage status for LMC, or CCPI with USE_CCPI */
BDK_DRAM_TEST_NO_BANNERS = 1 << 11, /**< Don't display banenrs at beginning of test */
BDK_DRAM_TEST_USE_CCPI = 1 << 12, /**< Test using other node across CCPI. Use to verify CCPI. This
automatically enables CCPI usage reporting unless NO_STATS is
also specified */
} bdk_dram_test_flags_t;
/**
* Convert a test enumeration into a string
*
* @param test Test to convert
*
* @return String for display
*/
extern const char* bdk_dram_get_test_name(int test);
/**
* Perform a memory test.
*
* @param test Test type to run
* @param start_address
* Physical address to start at
* @param length Length of memory block
* @param flags Flags to control memory test options. Zero defaults to testing all
* node with statistics and progress output.
*
* @return Number of errors found. Zero is success. Negative means the test
* did not run due to some other failure.
*/
extern int
bdk_dram_test(int test, uint64_t start_address, uint64_t length,
bdk_dram_test_flags_t flags);
/**
* Given a physical DRAM address, extract information about the node, LMC, DIMM,
* rank, bank, row, and column that was accessed.
*
* @param address Physical address to decode
* @param node Node the address was for
* @param lmc LMC controller the address was for
* @param dimm DIMM the address was for
* @param prank Physical RANK on the DIMM
* @param lrank Logical RANK on the DIMM
* @param bank BANK on the DIMM
* @param row Row on the DIMM
* @param col Column on the DIMM
*/
extern void
bdk_dram_address_extract_info(uint64_t address, int *node, int *lmc, int *dimm,
int *prank, int *lrank, int *bank, int *row, int *col);
/**
* Construct a physical address given the node, LMC, DIMM, rank, bank, row, and column.
*
* @param node Node the address was for
* @param lmc LMC controller the address was for
* @param dimm DIMM the address was for
* @param prank Physical RANK on the DIMM
* @param lrank Logical RANK on the DIMM
* @param bank BANK on the DIMM
* @param row Row on the DIMM
* @param col Column on the DIMM
*/
extern uint64_t
bdk_dram_address_construct_info(bdk_node_t node, int lmc, int dimm,
int prank, int lrank, int bank, int row, int col);
/**
* Inject a DRAM error at a specific address in memory. The injection can either
* be a single bit inside the byte, or a double bit error in the ECC byte. Double
* bit errors may corrupt memory, causing software to crash. The corruption is
* written to memory and will continue to exist until the cache line is written
* again. After a call to this function, the BDK should report a ECC error. Double
* bit errors corrupt bits 0-1.
*
* @param address Physical address to corrupt. Any byte alignment is supported
* @param bit Bit to corrupt in the byte (0-7), or -1 to create a double bit fault in the ECC
* byte.
*/
extern void bdk_dram_test_inject_error(uint64_t address, int bit);
/* These variables count the number of ECC errors. They should only be accessed atomically */
/* Keep the counts per memory channel (LMC) for more detail. */
#define BDK_MAX_MEM_CHANS 4
extern int64_t __bdk_dram_ecc_single_bit_errors[BDK_MAX_MEM_CHANS];
/* FIXME(dhendrix): redundant declaration in original BDK */
//extern int64_t __bdk_dram_ecc_double_bit_errors[BDK_MAX_MEM_CHANS];
/* These are internal support functions */
extern void __bdk_dram_flush_to_mem(uint64_t address);
extern void __bdk_dram_flush_to_mem_range(uint64_t area, uint64_t max_address);
extern void __bdk_dram_report_error(uint64_t address, uint64_t data, uint64_t correct, int burst, int fails);
extern void __bdk_dram_report_error2(uint64_t address1, uint64_t data1, uint64_t address2, uint64_t data2, int burst, int fails);
extern int __bdk_dram_retry_failure(int burst, uint64_t address, uint64_t data, uint64_t expected);
extern int __bdk_dram_retry_failure2(int burst, uint64_t address1, uint64_t data1, uint64_t address2, uint64_t data2);
static inline void __bdk_dram_write64(uint64_t address, uint64_t data)
{
volatile uint64_t *ptr = bdk_phys_to_ptr(address);
*ptr = data;
}
static inline uint64_t __bdk_dram_read64(uint64_t address)
{
volatile uint64_t *ptr = bdk_phys_to_ptr(address);
return *ptr;
}
/* This is the function prototype that all test must use. "start_address" is
the first byte to be tested (inclusive), "end_address" is the address right
after the region (exclusive). For example, if start_address equals
end_address, no memory will be tested */
typedef int (*__bdk_dram_test_t)(uint64_t start_address, uint64_t end_address, int bursts);
/* These are the actual tests that get run. Each test is meant to be run with
a small range and repeated on lots of cores and large ranges. The return
value is the number of errors found */
extern int __bdk_dram_test_mem_address_bus(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_checkerboard(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_data_bus(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_leftwalk0(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_leftwalk1(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_random(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_rightwalk0(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_rightwalk1(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_rows(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_self_addr(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_solid(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_mem_xor(uint64_t start_address, uint64_t end_address, int bursts);
extern int __bdk_dram_test_fast_scan(uint64_t area, uint64_t max_address, int bursts);
/** @} */
#endif /* !__CB_BDK_DRAM_TEST_H__ */